收藏本站
NXP Semiconductors
PESD5V0S1BSF
Bidirectional low capacitance ESD protection diode
7. Application information
The PESD5V0S1BSF is designed for the protection of one data or signal line from the
damage caused by ESD and/or other surge pulses. The device may be used on lines
where the signal polarities are both, positive and negative with respect to ground.
It provides protection against surges with up to 100 W per line.
line to be protected
PESD5V0S1BSF
GND
018aaa054
Fig 10. Application diagram
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD and Electrical Fast
Transient (EFT). The following guidelines are recommended:
1. Place the device as close to the input terminal or connector as possible
2. The path length between the device and the protected line should be minimized
3. Avoid running protected conductors in parallel with unprotected conductors
4. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops
5. Minimize the length of the transient return path to ground
6. Avoid using shared transient return paths to a common ground point
7. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
PESD5V0S1BSF
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 18 February 2011
? NXP B.V. 2011. All rights reserved.
7 of 13
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
PESD5V0S1UJ,115 DIODE ESD UNI-DIR 5.0V SOD-323F
PESD5V0S1ULD,315 DIODE ESD PROTECTION SOD-882
PESD5V0S2BT,215 DIODE BIDIR ESD PROTECT SOT23
PESD5V0S2UAT,215 DIODE DBL ESD PROTECTION SOT23
PESD5V0S4UD,115 DIODE ARRAY ESD 5V 6-TSOP
PESD5V0S4UF,115 DIODE QUAD ESD PROTECTION 6XSON
PESD5V0S5UD,115 DIODE ARRAY ESD 5V 6-TSOP
PESD5V0U1BB,115 DIODE ULOW ESD PROTECTION SOD523
相关代理商/技术参数
PESD5V0S1BSF_11 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Ultra low profile bidirectional low capacitance ESD protection diode
PESD5V0S1UA 制造商:NXP Semiconductors 功能描述:DIODE ESD LOW CAPACITANCE SOD323 制造商:NXP Semiconductors 功能描述:DIODE, ESD, LOW CAPACITANCE, SOD323 制造商:NXP Semiconductors 功能描述:DIODE, ESD, LOW CAPACITANCE, SOD323, Diode Type:ESD Protection, Power Dissipatio 制造商:NXP Semiconductors 功能描述:DIODE, ESD, LOW CAPACITANCE, SOD323, Diode Type:ESD Protection, Power Dissipation Pd:360mW, Clamping Voltage Vc Max:19V, Diode Case Style:SOD-323, No. of Pins:2, MSL:MSL 1 - Unlimited , RoHS Compliant: Yes
PESD5V0S1UA,115 功能描述:TVS 二极管 - 瞬态电压抑制器 PROTECTION DIODE RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
PESD5V0S1UA115 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述:
PESD5V0S1UAF 功能描述:TVS DIODE 5VWM 19VC SOD323 制造商:nexperia usa inc. 系列:汽车级，AEC-Q101 包装:剪切带（CT） 零件状态:在售 类型:齐纳 单向通道:1 电压 - 反向关态（典型值）:5V（最大） 电压 - 击穿（最小值）:6.2V 电压 - 箝位（最大值）@ Ipp:19V 电流 - 峰值脉冲（10/1000μs）:47A（8/20μs） 功率 - 峰值脉冲:890W 电源线路保护:无 应用:汽车级 不同频率时的电容:480pF @ 1MHz 工作温度:-55°C ~ 150°C（TA） 安装类型:表面贴装 封装/外壳:SC-76，SOD-323 供应商器件封装:SOD-323 标准包装:1
PESD5V0S1UB 制造商:NXP Semiconductors 功能描述:DIODE TVS SOD-523 制造商:NXP Semiconductors 功能描述:DIODE, TVS, SOD-523
PESD5V0S1UB T/R 功能描述:TVS 二极管 - 瞬态电压抑制器 5V ESD PROTECTION RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
PESD5V0S1UB,115 功能描述:TVS 二极管 - 瞬态电压抑制器 5V ESD PROTECTION RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C